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ALD La2O3 cap layers on high-k gates to modify the metal gate work function

dc.contributor.authorMaes, Jan
dc.contributor.authorSwerts, Johan
dc.contributor.authorTois, E.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorYu, HongYu
dc.date.accessioned2021-10-16T17:45:47Z
dc.date.available2021-10-16T17:45:47Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12538
dc.sourceIIOimport
dc.titleALD La2O3 cap layers on high-k gates to modify the metal gate work function
dc.typeProceedings paper
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewno
dc.source.conferenceAVS Topical Conference on Atomic Layer Deposition - ALD
dc.source.conferencedate24/07/2007
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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