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A comprehensive model for hot carrier degradation in LDMOS transistors

dc.contributor.authorMoens, P.
dc.contributor.authorMertens, Jan
dc.contributor.authorBauwens, F.
dc.contributor.authorJoris, P.
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorTack, M.
dc.date.accessioned2021-10-16T18:00:01Z
dc.date.available2021-10-16T18:00:01Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12585
dc.sourceIIOimport
dc.titleA comprehensive model for hot carrier degradation in LDMOS transistors
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Jan
dc.contributor.imecauthorDe Ceuninck, Ward
dc.source.peerreviewno
dc.source.beginpage492
dc.source.endpage497
dc.source.conferenceProceedings 45th Annual IEEE International Reliability Physics Symposium
dc.source.conferencedate15/04/2007
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - imec


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