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Stress-induced mobility enhancement for integrated power transistors

dc.contributor.authorMoens, Paul
dc.contributor.authorRoig, J.
dc.contributor.authorClemente, Francesca
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorDesoete, B.
dc.contributor.authorBauwens, F.
dc.contributor.authorTack, M.
dc.date.accessioned2021-10-16T18:00:22Z
dc.date.available2021-10-16T18:00:22Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12586
dc.sourceIIOimport
dc.titleStress-induced mobility enhancement for integrated power transistors
dc.typeProceedings paper
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.source.peerreviewno
dc.source.beginpage877
dc.source.endpage880
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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