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Study of time-dependent dielectric breakdown on gate oxide capacitors at high temperature

dc.contributor.authorMoonen, R.
dc.contributor.authorVanmeerbeek, P.
dc.contributor.authorLekens, Geert
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorMoens, P.
dc.contributor.authorBoutsen, J.
dc.date.accessioned2021-10-16T18:02:28Z
dc.date.available2021-10-16T18:02:28Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12593
dc.sourceIIOimport
dc.titleStudy of time-dependent dielectric breakdown on gate oxide capacitors at high temperature
dc.typeProceedings paper
dc.contributor.imecauthorLekens, Geert
dc.contributor.imecauthorDe Ceuninck, Ward
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage288
dc.source.endpage291
dc.source.conference14th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate11/07/2007
dc.source.conferencelocationBangalore India
imec.availabilityPublished - open access


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