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Ultra thin gate oxide technology and reliability

dc.contributor.authorHeyns, Marc
dc.contributor.authorDepas, Michel
dc.contributor.authorTeerlinck, Ivo
dc.contributor.authorMeuris, Marc
dc.contributor.authorMertens, Paul
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMouche, Laurent
dc.contributor.authorNigam, Tanya
dc.contributor.authorWilhelm, Rudi
dc.contributor.authorKnotter, Martin
dc.contributor.authorWolke, K.
dc.contributor.authorCrossley, A.
dc.contributor.authorSofield, C. J.
dc.contributor.authorGräf, D.
dc.date.accessioned2021-09-29T14:33:57Z
dc.date.available2021-09-29T14:33:57Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1260
dc.sourceIIOimport
dc.titleUltra thin gate oxide technology and reliability
dc.typeProceedings paper
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorMertens, Paul
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage208
dc.source.endpage211
dc.source.conferenceProceedings 5th International Symposium on Semiconductor Manufacturing - ISSM
dc.source.conferencedate2/10/1996
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - open access


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