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In-line characterization of heterojunction bipolar transistor base layers by high-resolution X-ray diffraction

dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVan Daele, Benny
dc.contributor.authorRyan, Paul
dc.contributor.authorWormington, Matthew
dc.contributor.authorHopkins, John
dc.date.accessioned2021-10-16T18:08:36Z
dc.date.available2021-10-16T18:08:36Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12613
dc.sourceIIOimport
dc.titleIn-line characterization of heterojunction bipolar transistor base layers by high-resolution X-ray diffraction
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.source.peerreviewno
dc.source.beginpage151
dc.source.endpage160
dc.source.conferenceAnalytical Techniques for Semiconductor Materials and Process Characterization 5 - ALTECH
dc.source.conferencedate13/09/2007
dc.source.conferencelocationMünchen
dc.identifier.urlhttp://www.ecsdl.org/getabs/servlet/GetabsServlet?prog=normal&id=ECSTF8000010000001000151000001&idtype=cvips&gifs=Yes
imec.availabilityPublished - imec
imec.internalnotesECS Trans.; Vol. 10, issue 1


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