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In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction

dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVan Daele, Benny
dc.contributor.authorRyan, Paul
dc.contributor.authorWormington, Paul
dc.contributor.authorHopkins, John
dc.date.accessioned2021-10-16T18:08:55Z
dc.date.available2021-10-16T18:08:55Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12614
dc.sourceIIOimport
dc.titleIn-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.source.peerreviewno
dc.source.conference3rd International Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate8/11/2007
dc.source.conferencelocationSendai Japan
dc.identifier.urlhttp://www.murota.riec.tohoku.ac.jp/SiGeC2007/
imec.availabilityPublished - imec
imec.internalnotesThe contribution consisted in a short oral presentation and in a poster. Also in the abstract booklet of the conference


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