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Study of dopant diffusion and defect evolution for advanced ultra shallow junctions based on atomistic kinetic monte carlo approach

dc.contributor.authorNoda, T.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorFelch, S.
dc.contributor.authorParihar, V.
dc.contributor.authorVrancken, Christa
dc.contributor.authorSeveri, Simone
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorFalepin, A.
dc.contributor.authorJanssens, Tom
dc.contributor.authorBender, Hugo
dc.contributor.authorVan Daele, B.
dc.contributor.authorEyben, Pierre
dc.contributor.authorNiwa, M.
dc.contributor.authorSchreutelkamp, R.
dc.contributor.authorNouri, F.
dc.contributor.authorAbsil, Philippe
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T18:11:47Z
dc.date.available2021-10-16T18:11:47Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12623
dc.sourceIIOimport
dc.titleStudy of dopant diffusion and defect evolution for advanced ultra shallow junctions based on atomistic kinetic monte carlo approach
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage712
dc.source.endpage713
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate18/09/2007
dc.source.conferencelocationTsukuba Japan
imec.availabilityPublished - open access


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