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Atomic layer deposition of HfO2 on (100) and (110) oriented silicon surfaces

dc.contributor.authorNyns, Laura
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHall, Lindsey
dc.contributor.authorDelabie, Annelies
dc.contributor.authorHeyns, Marc
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorVinckier, Chris
dc.contributor.authorZimmerman, Paul
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-16T18:13:46Z
dc.date.available2021-10-16T18:13:46Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12629
dc.sourceIIOimport
dc.titleAtomic layer deposition of HfO2 on (100) and (110) oriented silicon surfaces
dc.typeProceedings paper
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage73
dc.source.endpage77
dc.source.conferencePhysics and Technology of High-K Dielectrics
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, issue 4


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