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Radiation damage in proton-irradiated stained Si n-MOSFETs

dc.contributor.authorOhtani, T.
dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorKudou, T.
dc.contributor.authorOhyama, H.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T18:15:30Z
dc.date.available2021-10-16T18:15:30Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12634
dc.sourceIIOimport
dc.titleRadiation damage in proton-irradiated stained Si n-MOSFETs
dc.typeOral presentation
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference26th Electronic Materials Symposium
dc.source.conferencedate4/07/2007
dc.source.conferencelocationShizuoka Japan
imec.availabilityPublished - imec


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