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Strained Si/SiGe MOS technology

dc.contributor.authorOlsen, S.
dc.contributor.authorYan, L.
dc.contributor.authorAgaiby, R.
dc.contributor.authorEscobedo-Cousin, E.
dc.contributor.authorO'Neill, A.G.
dc.contributor.authorHellstrom, P.-E.
dc.contributor.authorOstling, M.
dc.contributor.authorLyutovich, L.
dc.contributor.authorKasper, E.
dc.contributor.authorClaeys, Cor
dc.contributor.authorParker, E.H.C.
dc.date.accessioned2021-10-16T18:17:24Z
dc.date.available2021-10-16T18:17:24Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12640
dc.sourceIIOimport
dc.titleStrained Si/SiGe MOS technology
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conference4th International Symposium on Advanced Gate Stack technology
dc.source.conferencedate26/09/2007
dc.source.conferencelocationDallas, TX USA
imec.availabilityPublished - imec


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