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Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2

dc.contributor.authorO'Regan, Terrance
dc.contributor.authorFischetti, Massimo
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.date.accessioned2021-10-16T18:22:28Z
dc.date.available2021-10-16T18:22:28Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12656
dc.sourceIIOimport
dc.titleElectron mobility calculations for Si, Ge and III-V inversion layers with HfO2
dc.typeOral presentation
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.source.peerreviewno
dc.source.conference12th International Workshop on Computational Electronics - IWCE12
dc.source.conferencedate8/10/2007
dc.source.conferencelocationAmherst, MA USA
imec.availabilityPublished - imec


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