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Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer

dc.contributor.authorPetry, Jasmine
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorXiong, K.
dc.contributor.authorRavit, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorO'Connor, Robert
dc.contributor.authorVeloso, Anabela
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBrus, Stephan
dc.contributor.authorVan Berkum, J.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBiesemans, Serge
dc.contributor.authorHooker, Jacob
dc.date.accessioned2021-10-16T18:36:14Z
dc.date.available2021-10-16T18:36:14Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12699
dc.sourceIIOimport
dc.titleTuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.beginpage329
dc.source.endpage332
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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