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Impact of sub-melt laser annealing on Si1-xGex source/drain defectivity

dc.contributor.authorRosseel, Erik
dc.contributor.authorLu, J.P
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVerheyen, Peter
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorRichard, Olivier
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorAbsil, Philippe
dc.contributor.authorMc Intosh, R.
dc.contributor.authorFelch, S.
dc.contributor.authorSchreutelkamp, Rob
dc.date.accessioned2021-10-16T19:11:06Z
dc.date.available2021-10-16T19:11:06Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12806
dc.sourceIIOimport
dc.titleImpact of sub-melt laser annealing on Si1-xGex source/drain defectivity
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage307
dc.source.endpage315
dc.source.conference15th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate2/10/2007
dc.source.conferencelocationCatania Italy
imec.availabilityPublished - open access


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