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High-k characterization by RFCV

dc.contributor.authorSan Andres Serrano, Enrique
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRoussel, Philippe
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorTrojman, Lionel
dc.contributor.authorSeveri, Simone
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T19:22:11Z
dc.date.available2021-10-16T19:22:11Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12837
dc.sourceIIOimport
dc.titleHigh-k characterization by RFCV
dc.typeProceedings paper
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage363
dc.source.endpage376
dc.source.conferencePhysics and Technology of High-k Dielectrics
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, Iss. 4


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