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A 10 μm thick poly-SiGe gyroscope processed above 0.35 μm CMOS

dc.contributor.authorScheurle, A.
dc.contributor.authorFuchs, T.
dc.contributor.authorKehr, K.
dc.contributor.authorLeinenbach, C.
dc.contributor.authorKronmueller, S.
dc.contributor.authorArias, A.
dc.contributor.authorCeballos, J.
dc.contributor.authorLagos, M.A.
dc.contributor.authorMora, J.-M.
dc.contributor.authorMunoz, J.M.
dc.contributor.authorRagel, A.
dc.contributor.authorRamos, J.
dc.contributor.authorVan Aerde, Steven
dc.contributor.authorSpengler, J.
dc.contributor.authorMehta, Anshu
dc.contributor.authorVerbist, Agnes
dc.contributor.authorDu Bois, Bert
dc.contributor.authorWitvrouw, Ann
dc.date.accessioned2021-10-16T19:28:01Z
dc.date.available2021-10-16T19:28:01Z
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12854
dc.sourceIIOimport
dc.titleA 10 μm thick poly-SiGe gyroscope processed above 0.35 μm CMOS
dc.typeProceedings paper
dc.contributor.imecauthorVan Aerde, Steven
dc.contributor.imecauthorDu Bois, Bert
dc.contributor.orcidimecDu Bois, Bert::0000-0003-0147-1296
dc.source.peerreviewno
dc.source.beginpage39
dc.source.endpage42
dc.source.conferenceProceedings IEEE MEMS
dc.source.conferencedate21/01/2007
dc.source.conferencelocationKobe Japan
imec.availabilityPublished - imec


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