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Charge pumping and mobility measurements on strained SOI MOSFETs

dc.contributor.authorSchmidt, M.
dc.contributor.authorGottlob, H. D. B.
dc.contributor.authorEchermeyer, T.
dc.contributor.authorWahlbrink, T.
dc.contributor.authorMollenhauer, T.
dc.contributor.authorBaus, M.
dc.contributor.authorBuca, D.M.
dc.contributor.authorMantl, S.
dc.contributor.authorReiche, M.
dc.contributor.authorLoo, Roger
dc.contributor.authorLemme, M.C.
dc.contributor.authorKurz, H.
dc.date.accessioned2021-10-16T19:28:23Z
dc.date.available2021-10-16T19:28:23Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12855
dc.sourceIIOimport
dc.titleCharge pumping and mobility measurements on strained SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference8th European Workshop on ULtimate Integration of Silicon - ULIS
dc.source.conferencedate14/03/2007
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - open access


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