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4X reticles with 3% linewidth control for the development of 0.18 µm lithography

dc.contributor.authorJonckheere, Rik
dc.contributor.authorMoonens, Jos
dc.contributor.authorPotoms, Goedele
dc.contributor.authorBovie, Inge
dc.contributor.authorVan den hove, Luc
dc.date.accessioned2021-09-29T14:37:29Z
dc.date.available2021-09-29T14:37:29Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1287
dc.sourceIIOimport
dc.title4X reticles with 3% linewidth control for the development of 0.18 µm lithography
dc.typeProceedings paper
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorPotoms, Goedele
dc.contributor.imecauthorVan den hove, Luc
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage290
dc.source.endpage301
dc.source.conference16th Annual Symposium on Photomask Technology and Management
dc.source.conferencedate18/09/1996
dc.source.conferencelocationRedwood City, CA USA
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 2884


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