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Scaling down of MOCVD HfSiON to 1nm EOT

dc.contributor.authorShi, Xiaoping
dc.contributor.authorRothschild, Aude
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDate, Lucien
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorSchaekers, Marc
dc.date.accessioned2021-10-16T19:39:36Z
dc.date.available2021-10-16T19:39:36Z
dc.date.issued2007-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12888
dc.sourceIIOimport
dc.titleScaling down of MOCVD HfSiON to 1nm EOT
dc.typeProceedings paper
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage13
dc.source.endpage24
dc.source.conferencePhysics and Technology of High-K Dielectrics
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; vol. 11, iss. 4


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