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The length-dependence of the 1/f noise of graded-channel SOI nMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorChung, T.M.
dc.contributor.authorFlandre, D.
dc.contributor.authorRaskin, J.P.
dc.date.accessioned2021-10-16T19:45:09Z
dc.date.available2021-10-16T19:45:09Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12903
dc.sourceIIOimport
dc.titleThe length-dependence of the 1/f noise of graded-channel SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage373
dc.source.endpage381
dc.source.conferenceMicroelectonics Technology and Devices SBMICRO 2007
dc.source.conferencedate3/09/2007
dc.source.conferencelocationRio de Janeiro Brazil
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol.9, nr.1


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