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The low-frequency noise behavior of pMOSFETs with embedded SiGe source/drain regions

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T19:47:12Z
dc.date.available2021-10-16T19:47:12Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12909
dc.sourceIIOimport
dc.titleThe low-frequency noise behavior of pMOSFETs with embedded SiGe source/drain regions
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage83
dc.source.endpage86
dc.source.conferenceNoise and Fluctuations. 19th International Conference
dc.source.conferencedate9/09/2007
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - open access
imec.internalnotesAIP Conference Proceedings; Vol. 922


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