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High Ge content SGOI substrates obtained by the Ge condensation technique:a template for growth of strained epitaxial Ge

dc.contributor.authorSouriau, Laurent
dc.contributor.authorTerzieva, Valentina
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClemente, Francesca
dc.contributor.authorBrijs, Bert
dc.contributor.authorMoussa, Alain
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-16T19:56:00Z
dc.date.available2021-10-16T19:56:00Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12934
dc.sourceIIOimport
dc.titleHigh Ge content SGOI substrates obtained by the Ge condensation technique:a template for growth of strained epitaxial Ge
dc.typeProceedings paper
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conference5th International Conference on Silicon Epitaxy and Heterostructures - ICSI-5
dc.source.conferencedate20/05/2007
dc.source.conferencelocationMarseille France
imec.availabilityPublished - imec


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