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Electrical properties of strained Si MOSFETs by high-fluence electron-irradiation

dc.contributor.authorTakakura, K.
dc.contributor.authorAoki, Y.
dc.contributor.authorHayama, K.
dc.contributor.authorOyana, H.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T20:06:42Z
dc.date.available2021-10-16T20:06:42Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12965
dc.sourceIIOimport
dc.titleElectrical properties of strained Si MOSFETs by high-fluence electron-irradiation
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceThe 12th Int. Conf. on Defect Recognition, Imaging and Physics of Semiconductors - DRIP XII
dc.source.conferencedate9/09/2007
dc.source.conferencelocationBerlin Germany
imec.availabilityPublished - imec


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