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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates

dc.contributor.authorTerzieva, Valentina
dc.contributor.authorSouriau, Laurent
dc.contributor.authorCaymax, Matty
dc.contributor.authorBrunco, David
dc.contributor.authorMoussa, Alain
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorLoo, Roger
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-16T20:07:30Z
dc.date.available2021-10-16T20:07:30Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12967
dc.sourceIIOimport
dc.titleBenefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
dc.typeOral presentation
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference5th International Conference on Silicon Epitaxy and Heterostructures - ICSI-5
dc.source.conferencedate20/05/2007
dc.source.conferencelocationMarseille France
imec.availabilityPublished - open access


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