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Post ion-implant photoresist removal via wet chemical cleans combined with physical force pretreatments

dc.contributor.authorTotir, George
dc.contributor.authorFrank, Martin M.
dc.contributor.authorVos, Rita
dc.contributor.authorArnauts, Sophia
dc.contributor.authorBearda, Twan
dc.contributor.authorKenis, Karine
dc.contributor.authorDelande, Tinne
dc.contributor.authorLe, Quoc Toan
dc.contributor.authorKesters, Els
dc.contributor.authorVereecke, Guy
dc.contributor.authorMannaert, Geert
dc.contributor.authorLux, Marcel
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorConard, Thierry
dc.contributor.authorBanerjee,
dc.contributor.authorMalhouitre, Stephane
dc.contributor.authorLeunissen, Peter
dc.contributor.authorMertens, Paul
dc.date.accessioned2021-10-16T20:14:05Z
dc.date.available2021-10-16T20:14:05Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12985
dc.sourceIIOimport
dc.titlePost ion-implant photoresist removal via wet chemical cleans combined with physical force pretreatments
dc.typeProceedings paper
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorDelande, Tinne
dc.contributor.imecauthorLe, Quoc Toan
dc.contributor.imecauthorKesters, Els
dc.contributor.imecauthorVereecke, Guy
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorLux, Marcel
dc.contributor.imecauthorHoflijk, Ilse
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMertens, Paul
dc.contributor.orcidimecLe, Quoc Toan::0000-0002-0206-6279
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage219
dc.source.endpage226
dc.source.conferenceCleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, iss. 2


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