Show simple item record

Defect characterization of polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy

dc.contributor.authorVan Gestel, Dries
dc.contributor.authorGordon, Ivan
dc.contributor.authorCarnel, Lodewijk
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-16T20:39:50Z
dc.date.available2021-10-16T20:39:50Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13055
dc.sourceIIOimport
dc.titleDefect characterization of polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage385
dc.source.endpage390
dc.source.conferenceAmorphous and Polycrystalline Thin-Film Silicon Science and Technology
dc.source.conferencedate9/04/2007
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://www.mrs.org/s_mrs/sec_subscribe.asp?CID=8749&DID=195279&action=detail
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 989


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record