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Challenges with respect to high-k/metal gate stack etching and cleaning

dc.contributor.authorVos, Rita
dc.contributor.authorArnauts, Sophia
dc.contributor.authorBovie, Inge
dc.contributor.authorOnsia, Bart
dc.contributor.authorGaraud, Sylvain
dc.contributor.authorXu, Kaidong
dc.contributor.authorYu, HongYu
dc.contributor.authorKubicek, Stefan
dc.contributor.authorRohr, Erika
dc.contributor.authorSchram, Tom
dc.contributor.authorVeloso, Anabela
dc.contributor.authorConard, Thierry
dc.contributor.authorLeunissen, Peter
dc.contributor.authorMertens, Paul
dc.date.accessioned2021-10-16T21:34:53Z
dc.date.available2021-10-16T21:34:53Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13202
dc.sourceIIOimport
dc.titleChallenges with respect to high-k/metal gate stack etching and cleaning
dc.typeProceedings paper
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMertens, Paul
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage275
dc.source.endpage283
dc.source.conferencePhysics and Technology of High-k Dielectrics
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, iss. 4


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