Show simple item record

Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack

dc.contributor.authorWitters, Liesbeth
dc.contributor.authorSon, Nak Jin
dc.contributor.authorFerain, Isabelle
dc.contributor.authorSan, Tamer
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorKerner, Christoph
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-16T21:45:42Z
dc.date.available2021-10-16T21:45:42Z
dc.date.issued2007-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13230
dc.sourceIIOimport
dc.titleTreshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack
dc.typeProceedings paper
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage31
dc.source.endpage32
dc.source.conferenceIEEE International SOI Conference
dc.source.conferencedate1/10/2007
dc.source.conferencelocationIndian Wells, CA USA
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record