Publication:
Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack
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1906 since deposited on 2021-10-16
2last month
Acq. date: 2026-08-10
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Views
1906 since deposited on 2021-10-16
2last month
Acq. date: 2026-08-10
Citations