Publication:

Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack

Date

2007-10
Proceedings Paper
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dc.contributor.authorWitters, Liesbeth
dc.contributor.authorSon, Nak Jin
dc.contributor.authorFerain, Isabelle
dc.contributor.authorSan, Tamer
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorKerner, Christoph
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-16T21:45:42Z
dc.date.available2021-10-16T21:45:42Z
dc.date.issued2007-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13230
dc.source.beginpage31
dc.source.conferenceIEEE International SOI Conference
dc.source.conferencedate1/10/2007
dc.source.conferencelocationIndian Wells, CA USA
dc.source.endpage32
dc.title

Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack

dc.typeProceedings paper
dspace.entity.typePublication
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