Publication:
Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack
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1899 since deposited on 2021-10-16
Acq. date: 2025-10-24
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Views
1899 since deposited on 2021-10-16
Acq. date: 2025-10-24
Citations