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Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack
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Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack
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Date
2007-10
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Witters, Liesbeth
;
Son, Nak Jin
;
Ferain, Isabelle
;
San, Tamer
;
Singanamalla, Raghunath
;
Kerner, Christoph
;
Collaert, Nadine
;
De Meyer, Kristin
;
Jurczak, Gosia
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1902
since deposited on 2021-10-16
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Acq. date: 2025-12-11
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Views
1902
since deposited on 2021-10-16
2
last month
Acq. date: 2025-12-11
Citations