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Asymmetric relaxation of SiGe in patterned Si line structures

dc.contributor.authorWormington, Matthew
dc.contributor.authorLafford, Tamzin
dc.contributor.authorGodny, Stephane
dc.contributor.authorRyan, Paul
dc.contributor.authorLoo, Roger
dc.contributor.authorBhouri, Nada
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-16T21:46:05Z
dc.date.available2021-10-16T21:46:05Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13231
dc.sourceIIOimport
dc.titleAsymmetric relaxation of SiGe in patterned Si line structures
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceInternational Conference on Frontiers of Characterization and Metrology for Nanoelectronics at NIST
dc.source.conferencedate27/03/2007
dc.source.conferencelocationGaithersburg, MD USA
imec.availabilityPublished - open access


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