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Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases

dc.contributor.authorYu, HongYu
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorVeloso, Anabela
dc.contributor.authorLauwers, Anne
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorOnsia, Bart
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorDemand, Marc
dc.contributor.authorVos, Rita
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorBrus, Stephan
dc.contributor.authorShi, Xiaoping
dc.contributor.authorKubicek, Stefan
dc.contributor.authorVrancken, Christa
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorLehnen, Peer
dc.contributor.authorKittl, Jorge
dc.contributor.authorNiwa, M.
dc.contributor.authorYin, K.M.
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T21:54:07Z
dc.date.available2021-10-16T21:54:07Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13250
dc.sourceIIOimport
dc.titleLow Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage18
dc.source.endpage19
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2007
dc.source.conferencelocationKyoto
imec.availabilityPublished - imec


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