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Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

dc.contributor.authorZahid, Mohammed
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorTrojman, Lionel
dc.contributor.authorFerain, Isabelle
dc.contributor.authorSan Andres Serrano, Enrique
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorZhang, J.F.
dc.contributor.authorHeyns, Marc
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-16T21:57:16Z
dc.date.available2021-10-16T21:57:16Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13257
dc.sourceIIOimport
dc.titleAdvanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewno
dc.source.beginpage32
dc.source.endpage33
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2007
dc.source.conferencelocationKyoto
imec.availabilityPublished - imec


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