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Effect of dopants on the dissolution behavior of silicon substrates in HF-based cleaning solutions

dc.contributor.authorAbu Jeriban, Salima
dc.contributor.authorGuiot, Y.
dc.contributor.authorBacherius, L.
dc.contributor.authorProost, J.
dc.contributor.authorSleeckx, Erik
dc.contributor.authorVos, Rita
dc.contributor.authorMertens, Paul
dc.date.accessioned2021-10-17T06:13:15Z
dc.date.available2021-10-17T06:13:15Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13280
dc.sourceIIOimport
dc.titleEffect of dopants on the dissolution behavior of silicon substrates in HF-based cleaning solutions
dc.typeProceedings paper
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorMertens, Paul
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage139
dc.source.endpage142
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces VIII - UCPSS
dc.source.conferencedate18/09/2006
dc.source.conferencelocationAntwerpen Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vol. 134


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