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dc.contributor.authorAdelmann, Christoph
dc.contributor.authorLehnen, Peer
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorChang, Vincent
dc.contributor.authorRohr, Erika
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorBoissiere, Olivier
dc.contributor.authorLohe, Christoph
dc.contributor.authorSchram, Tom
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-17T06:13:18Z
dc.date.available2021-10-17T06:13:18Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13282
dc.sourceIIOimport
dc.titleThermally-stable high effective work function TaCN and Ta2N films for pMOS metal gate applications
dc.typeProceedings paper
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage1073-H01-08
dc.source.conferenceMaterials Science of High-k Dielectric Stacks - From Fundamentals to Technology
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1073E


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