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Defect density of ultra-thin gate oxides grown by conventional oxidation processes

dc.contributor.authorDepas, Michel
dc.contributor.authorVermeire, Bert
dc.contributor.authorMertens, Paul
dc.contributor.authorSchaekers, Marc
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-29T12:40:52Z
dc.date.available2021-09-29T12:40:52Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/132
dc.sourceIIOimport
dc.titleDefect density of ultra-thin gate oxides grown by conventional oxidation processes
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage319
dc.source.endpage323
dc.source.conferenceProceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate19/09/1994
dc.source.conferencelocationBrugge Belgium
imec.availabilityPublished - open access


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