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Channel hot-carrier degradation under static stress in short channel transistors with high-k/metal gate stacks

dc.contributor.authorAmat, E.
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorRodríguez, R.
dc.contributor.authorNafría, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T06:13:39Z
dc.date.available2021-10-17T06:13:39Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13300
dc.sourceIIOimport
dc.titleChannel hot-carrier degradation under static stress in short channel transistors with high-k/metal gate stacks
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage103
dc.source.endpage106
dc.source.conference9th International Conference on ULtimate Integration on Silicon - ULIS
dc.source.conferencedate12/03/2008
dc.source.conferencelocationUdine Italy
imec.availabilityPublished - open access


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