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Impact of nitridation on recoverable and permanent NBTI degradation in high-k/metal-gate pMOSFETs

dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T06:13:52Z
dc.date.available2021-10-17T06:13:52Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13308
dc.sourceIIOimport
dc.titleImpact of nitridation on recoverable and permanent NBTI degradation in high-k/metal-gate pMOSFETs
dc.typeOral presentation
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.conference15th Workshop on Dielectrics in Microelectronics - WoDiM
dc.source.conferencedate23/06/2008
dc.source.conferencelocationBad Saarow Germany
imec.availabilityPublished - imec


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