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Impact of millisecond laser anneal on the thermal stress-induced defect creation in Si1-xGex source/drain junctions

dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRosseel, Erik
dc.contributor.authorVerheyen, Peter
dc.contributor.authorSouriau, Laurent
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorLoo, Roger
dc.contributor.authorAbsil, Philippe
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T06:15:22Z
dc.date.available2021-10-17T06:15:22Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13344
dc.sourceIIOimport
dc.titleImpact of millisecond laser anneal on the thermal stress-induced defect creation in Si1-xGex source/drain junctions
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage23
dc.source.endpage30
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
dc.source.conferencedate18/05/2008
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - imec
imec.internalnotesECS Trans.; Vol. 13, issue 1


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