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Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1-xGex source/drain junctions

dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVissouvanadin, B.
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T06:15:25Z
dc.date.available2021-10-17T06:15:25Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13345
dc.sourceIIOimport
dc.titleInfluence of the strain-relaxation induced defect creation on the leakage current of embedded Si1-xGex source/drain junctions
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceInternational Conference on Extended Defects in Semiconductors - EDS
dc.source.conferencedate14/09/2008
dc.source.conferencelocationPoitiers France
imec.availabilityPublished - imec


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