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SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET

dc.contributor.authorBauer, M.
dc.contributor.authorMachkaoutsan, V.
dc.contributor.authorWeeks, D.
dc.contributor.authorZhang, Y.
dc.contributor.authorThomas, S.G.
dc.contributor.authorVerheyen, Peter
dc.contributor.authorKerner, Christoph
dc.contributor.authorClemente, Francesca
dc.contributor.authorBender, Hugo
dc.contributor.authorShamiryan, Denis
dc.contributor.authorLoo, Roger
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-17T06:15:41Z
dc.date.available2021-10-17T06:15:41Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13350
dc.sourceIIOimport
dc.titleSiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
dc.typeMeeting abstract
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2486
dc.source.conference214th ECS Meeting
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. 2008-02


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