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SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
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SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
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Date
2008
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bauer, Matthias
;
Machkaoutsan, Vladimir
;
Zhang, Y.
;
Weeks, Doran
;
Spear, Jennifer
;
Thomas, Shawn
;
Verheyen, Peter
;
Kerner, Christoph
;
Clemente, Francesca
;
Bender, Hugo
;
Shamiryan, Denis
;
Loo, Roger
;
Hikavyy, Andriy
;
Hoffmann, Thomas Y.
;
Absil, Philippe
;
Biesemans, Serge
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1942
since deposited on 2021-10-17
Acq. date: 2025-12-13
Citations
Metrics
Views
1942
since deposited on 2021-10-17
Acq. date: 2025-12-13
Citations