Authors

Bauer, Matthias; Machkaoutsan, Vladimir; Zhang, Y.; Weeks, Doran; Spear, Jennifer; Thomas, Shawn; Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hikavyy, Andriy; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge

Conference

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Title

SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET

Publication type

Proceedings paper

Embargo date

9999-12-31