dc.contributor.author | Bauer, Matthias | |
dc.contributor.author | Machkaoutsan, Vladimir | |
dc.contributor.author | Zhang, Y. | |
dc.contributor.author | Weeks, Doran | |
dc.contributor.author | Spear, Jennifer | |
dc.contributor.author | Thomas, Shawn | |
dc.contributor.author | Verheyen, Peter | |
dc.contributor.author | Kerner, Christoph | |
dc.contributor.author | Clemente, Francesca | |
dc.contributor.author | Bender, Hugo | |
dc.contributor.author | Shamiryan, Denis | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Hikavyy, Andriy | |
dc.contributor.author | Hoffmann, Thomas Y. | |
dc.contributor.author | Absil, Philippe | |
dc.contributor.author | Biesemans, Serge | |
dc.date.accessioned | 2021-10-17T06:15:45Z | |
dc.date.available | 2021-10-17T06:15:45Z | |
dc.date.issued | 2008 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13351 | |
dc.source | IIOimport | |
dc.title | SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Machkaoutsan, Vladimir | |
dc.contributor.imecauthor | Verheyen, Peter | |
dc.contributor.imecauthor | Kerner, Christoph | |
dc.contributor.imecauthor | Bender, Hugo | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Hikavyy, Andriy | |
dc.contributor.imecauthor | Absil, Philippe | |
dc.contributor.imecauthor | Biesemans, Serge | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 1001 | |
dc.source.endpage | 1013 | |
dc.source.conference | SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices | |
dc.source.conferencedate | 12/10/2008 | |
dc.source.conferencelocation | Honolulu, HI USA | |
imec.availability | Published - open access | |
imec.internalnotes | ECS Transactions; Vol. 16, Issue 10 | |