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SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET

dc.contributor.authorBauer, Matthias
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorZhang, Y.
dc.contributor.authorWeeks, Doran
dc.contributor.authorSpear, Jennifer
dc.contributor.authorThomas, Shawn
dc.contributor.authorVerheyen, Peter
dc.contributor.authorKerner, Christoph
dc.contributor.authorClemente, Francesca
dc.contributor.authorBender, Hugo
dc.contributor.authorShamiryan, Denis
dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-17T06:15:45Z
dc.date.available2021-10-17T06:15:45Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13351
dc.sourceIIOimport
dc.titleSiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
dc.typeProceedings paper
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1001
dc.source.endpage1013
dc.source.conferenceSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 16, Issue 10


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