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Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

dc.contributor.authorBuca, D.
dc.contributor.authorTrinkaus, H.
dc.contributor.authorHolländer, B.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorMantl, S.
dc.date.accessioned2021-10-17T06:25:20Z
dc.date.available2021-10-17T06:25:20Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13466
dc.sourceIIOimport
dc.titleImprovement of He ion induced SiGe layer relaxation by a thin Si:C layer
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage40
dc.source.endpage41
dc.source.conference4th International SiGe Technology and Device Meeting
dc.source.conferencedate11/05/2008
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - open access


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