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Effect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cells

dc.contributor.authorCacciato, Antonio
dc.contributor.authorBreuil, Laurent
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRichard, Olivier
dc.contributor.authorRothschild, Aude
dc.contributor.authorFurnemont, Arnaud
dc.contributor.authorBender, Hugo
dc.contributor.authorKittl, Jorge
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-17T06:25:46Z
dc.date.available2021-10-17T06:25:46Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13470
dc.sourceIIOimport
dc.titleEffect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cells
dc.typeProceedings paper
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage1071-F02-08
dc.source.conferenceMaterials Science and Technology for Nonvolatile Memories
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1071


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