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Influence of the drain bias and gate length ofpartially depleted SOI MOSFETs on the ZTC niasing point
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Influence of the drain bias and gate length ofpartially depleted SOI MOSFETs on the ZTC niasing point
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Date
2008
Proceedings Paper
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17773.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Camillo, L.M.
;
Martino, J.A.
;
Simoen, Eddy
;
Claeys, Cor
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1816
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Acq. date: 2025-12-12
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Metrics
Views
1816
since deposited on 2021-10-17
3
last month
Acq. date: 2025-12-12
Citations