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dc.contributor.authorChang, Kao-Shuo
dc.contributor.authorGreen, M.L.
dc.contributor.authorSuehle, J.
dc.contributor.authorHattrick-Simpers, J.
dc.contributor.authorTakeuchi, I.
dc.contributor.authorOhmori, K.
dc.contributor.authorChikyow, T.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMajhi, P.
dc.date.accessioned2021-10-17T06:28:44Z
dc.date.available2021-10-17T06:28:44Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13496
dc.sourceIIOimport
dc.titleCombinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage151
dc.source.endpage159
dc.source.conferenceDielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing
dc.source.conferencedate18/05/2008
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 13, 2


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