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Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions

dc.contributor.authorChowdhury, Mohammad Kamruzzaman
dc.contributor.authorVissouvanadin Soubaretty, Bertrand
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorBhouri, Nada
dc.contributor.authorVerheyen, Peter
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRichard, Olivier
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorTomasini, P.
dc.contributor.authorThomas, S.G.
dc.contributor.authorLu, J.P.
dc.contributor.authorWeijtmans, J.W.
dc.contributor.authorWise, R.
dc.date.accessioned2021-10-17T06:32:25Z
dc.date.available2021-10-17T06:32:25Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13523
dc.sourceIIOimport
dc.titleInfluence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions
dc.typeProceedings paper
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage95
dc.source.endpage100
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology XII
dc.source.conferencedate14/10/2007
dc.source.conferencelocationErice Italy
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vols. 131-133


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