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Trap spectroscopy by charge injection and sensing (TSCIS): a quantitative electrical technique for studying defects in dielectric stacks

dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKaczer, Ben
dc.contributor.authorZahid, Mohammed
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T06:50:50Z
dc.date.available2021-10-17T06:50:50Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13642
dc.sourceIIOimport
dc.titleTrap spectroscopy by charge injection and sensing (TSCIS): a quantitative electrical technique for studying defects in dielectric stacks
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage775
dc.source.endpage778
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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